2DA1774Q-7
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- Mfr.Part #
- 2DA1774Q-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SOT523
- Stock
- 154
- In Stock ：
- 154
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -500mV
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 1.6mm
- ECCN Code :
- EAR99
- Width :
- 800μm
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Power Dissipation :
- 150mW
- Factory Lead Time :
- 13 Weeks
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 140MHz
- REACH SVHC :
- No SVHC
- Base Part Number :
- 2DA1774
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 140MHz
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Manufacturer Package Identifier :
- 2DA1774Q-7-F
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 150mW
- Weight :
- 2.012816mg
- Mount :
- Surface Mount
- Published :
- 2007
- Package / Case :
- SOT-523
- Collector Emitter Voltage (VCEO) :
- 50V
- Frequency :
- 140MHz
- Terminal Form :
- Gull wing
- Height :
- 750μm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 150mA
- Datasheets
- 2DA1774Q-7
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
2DA1774Q-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 140MHz.During maximum operation, collector current can be as low as 150mA volts.
2DA1774Q-7-F Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
2DA1774Q-7-F Applications
There are a lot of Diodes Incorporated
2DA1774Q-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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