2DA1774Q-7
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- Mfr.Part #
- 2DA1774Q-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SOT523
- Stock
- 154
- In Stock ：
- 154
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Weight :
- 2.012816mg
- Height :
- 750μm
- Base Part Number :
- 2DA1774
- Packaging :
- Tape and Reel (TR)
- Width :
- 800μm
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 140MHz
- Frequency :
- 140MHz
- Manufacturer Package Identifier :
- 2DA1774Q-7-F
- JESD-609 Code :
- e3
- Length :
- 1.6mm
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 150mW
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Transition Frequency :
- 140MHz
- Mount :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Element Configuration :
- Single
- Published :
- 2007
- Pin Count :
- 3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 150mA
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -500mV
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Package / Case :
- SOT-523
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 150mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- 2DA1774Q-7
2DA1774Q-7 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
2DA1774Q-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 140MHz.During maximum operation, collector current can be as low as 150mA volts.
2DA1774Q-7-F Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
2DA1774Q-7-F Applications
There are a lot of Diodes Incorporated
2DA1774Q-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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