2DA1774Q-7
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- Mfr.Part #
- 2DA1774Q-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SOT523
- Stock
- 154
- In Stock ：
- 154
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Manufacturer Package Identifier :
- 2DA1774Q-7-F
- Collector Emitter Saturation Voltage :
- -500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Power Dissipation :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Transition Frequency :
- 140MHz
- Base Part Number :
- 2DA1774
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Factory Lead Time :
- 13 Weeks
- Element Configuration :
- Single
- Height :
- 750μm
- Contact Plating :
- Tin
- Length :
- 1.6mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 140MHz
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Weight :
- 2.012816mg
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 60V
- Width :
- 800μm
- Max Power Dissipation :
- 150mW
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2007
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Frequency :
- 140MHz
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- SOT-523
- Terminal Position :
- Dual
- Max Collector Current :
- 150mA
- Datasheets
- 2DA1774Q-7
2DA1774Q-7 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
2DA1774Q-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 140MHz.During maximum operation, collector current can be as low as 150mA volts.
2DA1774Q-7-F Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
2DA1774Q-7-F Applications
There are a lot of Diodes Incorporated
2DA1774Q-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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