2DA1774Q-7
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- Mfr.Part #
- 2DA1774Q-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SOT523
- Stock
- 154
- In Stock ：
- 154
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 50V
- Weight :
- 2.012816mg
- Transition Frequency :
- 140MHz
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Power Dissipation :
- 150mW
- Width :
- 800μm
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 140MHz
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Frequency :
- 140MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- JESD-609 Code :
- e3
- Published :
- 2007
- Max Collector Current :
- 150mA
- Length :
- 1.6mm
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 150mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-523
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Height :
- 750μm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Manufacturer Package Identifier :
- 2DA1774Q-7-F
- Contact Plating :
- Tin
- Factory Lead Time :
- 13 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Base Part Number :
- 2DA1774
- Number of Elements :
- 1
- Datasheets
- 2DA1774Q-7
2DA1774Q-7 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
2DA1774Q-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 140MHz.During maximum operation, collector current can be as low as 150mA volts.
2DA1774Q-7-F Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
2DA1774Q-7-F Applications
There are a lot of Diodes Incorporated
2DA1774Q-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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