2DA1774Q-7
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- Mfr.Part #
- 2DA1774Q-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SOT523
- Stock
- 154
- In Stock ：
- 154
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 13 Weeks
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- -500mV
- Width :
- 800μm
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 140MHz
- Published :
- 2007
- Element Configuration :
- Single
- Transition Frequency :
- 140MHz
- Frequency :
- 140MHz
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Height :
- 750μm
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Length :
- 1.6mm
- Power Dissipation :
- 150mW
- Package / Case :
- SOT-523
- Number of Terminations :
- 3
- Max Power Dissipation :
- 150mW
- Weight :
- 2.012816mg
- Max Collector Current :
- 150mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer Package Identifier :
- 2DA1774Q-7-F
- Base Part Number :
- 2DA1774
- REACH SVHC :
- No SVHC
- Datasheets
- 2DA1774Q-7
2DA1774Q-7 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
2DA1774Q-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 140MHz.During maximum operation, collector current can be as low as 150mA volts.
2DA1774Q-7-F Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
2DA1774Q-7-F Applications
There are a lot of Diodes Incorporated
2DA1774Q-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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