2DA1213O-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

-5V

Collector Emitter Saturation Voltage :

-500mV

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

4

Package / Case :

TO-243AA

Collector Base Voltage (VCBO) :

50V

Case Connection :

COLLECTOR

Number of Elements :

1

Weight :

130.492855mg

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

50V

Length :

4.5mm

Max Collector Current :

2A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 1A

JESD-30 Code :

R-PSSO-F3

Terminal Form :

Flat

Factory Lead Time :

19 Weeks

Packaging :

Tape and Reel (TR)

Transition Frequency :

160MHz

JESD-609 Code :

e3

Continuous Collector Current :

-2A

Terminal Finish :

Matte Tin (Sn)

Published :

2010

Height :

1.5mm

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

hFE Min :

70

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

1W

Power Dissipation :

1W

Gain Bandwidth Product :

160MHz

Number of Terminations :

3

Frequency :

160MHz

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 500mA 2V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Pin Count :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Base Part Number :

2DA1213

Transistor Application :

SWITCHING

Width :

2.5mm

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant