2DA1213O-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

2DA1213

Power Dissipation :

1W

Pbfree Code :

yes

Number of Pins :

4

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 1A

Transition Frequency :

160MHz

Weight :

130.492855mg

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Radiation Hardening :

No

Frequency :

160MHz

Continuous Collector Current :

-2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-F3

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

-500mV

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

160MHz

Published :

2010

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

TO-243AA

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

19 Weeks

Mounting Type :

Surface Mount

hFE Min :

70

Operating Temperature :

-55°C~150°C TJ

Width :

2.5mm

Terminal Finish :

Matte Tin (Sn)

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

-5V

Length :

4.5mm

Max Power Dissipation :

1W

Transistor Application :

SWITCHING

Element Configuration :

Single

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 500mA 2V

Number of Elements :

1

Pin Count :

3

Collector Base Voltage (VCBO) :

50V

Mount :

Surface Mount

Max Collector Current :

2A

Height :

1.5mm

Transistor Type :

PNP

Packaging :

Tape and Reel (TR)