2DA1201Y-7
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- Mfr.Part #
- 2DA1201Y-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A SOT89-3
- Stock
- 1,068
- In Stock ：
- 1,068
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -120V
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Breakdown Voltage :
- 120V
- Number of Pins :
- 4
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Additional Feature :
- High Reliability
- Base Part Number :
- 2DA1201
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- -800mA
- Collector Emitter Saturation Voltage :
- -1V
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Factory Lead Time :
- 16 Weeks
- Emitter Base Voltage (VEBO) :
- -7V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 1.5W
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-F3
- Frequency :
- 160MHz
- Power Dissipation :
- 1.5W
- Weight :
- 51.993025mg
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2012
- Mount :
- Surface Mount
- Transition Frequency :
- 160MHz
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 800mA
- Gain Bandwidth Product :
- 160MHz
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Case Connection :
- COLLECTOR
- Packaging :
- Cut Tape (CT)
- Datasheets
- 2DA1201Y-7
2DA1201Y-7 Documents
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1201Y-7 Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2DA1201Y-7 Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -7V
a transition frequency of 160MHz
2DA1201Y-7 Applications
There are a lot of Diodes Incorporated
2DA1201Y-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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