2DA1201Y-7
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- Mfr.Part #
- 2DA1201Y-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A SOT89-3
- Stock
- 1,068
- In Stock ：
- 1,068
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 120V
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Published :
- 2012
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- -7V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 16 Weeks
- JESD-30 Code :
- R-PSSO-F3
- Gain Bandwidth Product :
- 160MHz
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Weight :
- 51.993025mg
- Frequency :
- 160MHz
- Max Collector Current :
- 800mA
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1.5W
- Transition Frequency :
- 160MHz
- Transistor Type :
- PNP
- Continuous Collector Current :
- -800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Packaging :
- Cut Tape (CT)
- Max Breakdown Voltage :
- 120V
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 1.5W
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Base Part Number :
- 2DA1201
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -1V
- Collector Emitter Breakdown Voltage :
- 120V
- Collector Base Voltage (VCBO) :
- -120V
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2DA1201Y-7
2DA1201Y-7 Documents
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1201Y-7 Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2DA1201Y-7 Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -7V
a transition frequency of 160MHz
2DA1201Y-7 Applications
There are a lot of Diodes Incorporated
2DA1201Y-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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