2DA1201Y-7
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- Mfr.Part #
- 2DA1201Y-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A SOT89-3
- Stock
- 1,068
- In Stock ：
- 1,068
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-243AA
- Max Breakdown Voltage :
- 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Continuous Collector Current :
- -800mA
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Transition Frequency :
- 160MHz
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.5W
- Published :
- 2012
- Number of Elements :
- 1
- Factory Lead Time :
- 16 Weeks
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.5W
- Collector Emitter Breakdown Voltage :
- 120V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA
- Weight :
- 51.993025mg
- Mount :
- Surface Mount
- Max Collector Current :
- 800mA
- Gain Bandwidth Product :
- 160MHz
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 160MHz
- Base Part Number :
- 2DA1201
- Collector Emitter Saturation Voltage :
- -1V
- Pbfree Code :
- yes
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- -7V
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- -120V
- Collector Emitter Voltage (VCEO) :
- 120V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Packaging :
- Cut Tape (CT)
- JESD-30 Code :
- R-PSSO-F3
- Datasheets
- 2DA1201Y-7
2DA1201Y-7 Documents
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1201Y-7 Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2DA1201Y-7 Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -7V
a transition frequency of 160MHz
2DA1201Y-7 Applications
There are a lot of Diodes Incorporated
2DA1201Y-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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