2DA1201Y-7
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- Mfr.Part #
- 2DA1201Y-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A SOT89-3
- Stock
- 1,068
- In Stock ：
- 1,068
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -1V
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 120V
- Emitter Base Voltage (VEBO) :
- -7V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Power Dissipation :
- 1.5W
- Terminal Form :
- Flat
- Factory Lead Time :
- 16 Weeks
- JESD-30 Code :
- R-PSSO-F3
- Weight :
- 51.993025mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -120V
- Frequency :
- 160MHz
- Transition Frequency :
- 160MHz
- Base Part Number :
- 2DA1201
- Max Power Dissipation :
- 1.5W
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 800mA
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Packaging :
- Cut Tape (CT)
- Continuous Collector Current :
- -800mA
- Gain Bandwidth Product :
- 160MHz
- Max Breakdown Voltage :
- 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 120V
- Published :
- 2012
- Datasheets
- 2DA1201Y-7
2DA1201Y-7 Documents
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
2DA1201Y-7 Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2DA1201Y-7 Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -7V
a transition frequency of 160MHz
2DA1201Y-7 Applications
There are a lot of Diodes Incorporated
2DA1201Y-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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