2DA1201Y-7

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Mfr.Part #
2DA1201Y-7
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 120V 0.8A SOT89-3
Stock
1,068
In Stock :
1,068

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Saturation Voltage :
-1V
Weight :
51.993025mg
Transition Frequency :
160MHz
Base Part Number :
2DA1201
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Mount :
Surface Mount
Terminal Form :
Flat
Frequency :
160MHz
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Case Connection :
COLLECTOR
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-F3
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Mounting Type :
Surface Mount
Max Power Dissipation :
1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 100mA 5V
Radiation Hardening :
No
Max Collector Current :
800mA
Polarity/Channel Type :
PNP
Max Breakdown Voltage :
120V
Element Configuration :
Single
Gain Bandwidth Product :
160MHz
Package / Case :
TO-243AA
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
100nA
Factory Lead Time :
16 Weeks
Continuous Collector Current :
-800mA
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
40
Emitter Base Voltage (VEBO) :
-7V
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Pbfree Code :
yes
Packaging :
Cut Tape (CT)
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
-120V
Terminal Finish :
Matte Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
1.5W
Collector Emitter Breakdown Voltage :
120V
Published :
2012
Number of Pins :
4
Collector Emitter Voltage (VCEO) :
120V
Additional Feature :
High Reliability
Datasheets
2DA1201Y-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DA1201Y-7 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2DA1201, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:TO-243AA, Number of Pins:4, 2DA1201Y-7 pinout, 2DA1201Y-7 datasheet PDF, 2DA1201Y-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DA1201Y-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DA1201Y-7


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount

2DA1201Y-7 Overview


In this device, the DC current gain is 120 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.

2DA1201Y-7 Features


the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -7V
a transition frequency of 160MHz


2DA1201Y-7 Applications


There are a lot of Diodes Incorporated
2DA1201Y-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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