23A008

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 5V

Pin Count :

2

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Mount :

Chassis Mount, Screw

Power Dissipation :

5W

Contact Plating :

Tin

JESD-609 Code :

e0

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Additional Feature :

High Reliability

Current - Collector (Ic) (Max) :

400mA

Operating Temperature :

200°C TJ

Transistor Application :

AMPLIFIER

Pbfree Code :

No

Collector Emitter Breakdown Voltage :

22V

Max Collector Current :

400mA

Number of Elements :

1

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 months ago)

Transition Frequency :

3700MHz

Frequency :

3.7GHz

Package / Case :

55BT

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

22V

Configuration :

Single

RoHS Status :

RoHS Compliant

Number of Pins :

55

Transistor Type :

NPN

Gain :

8.5dB ~ 9.5dB

Packaging :

Bulk

Max Power Dissipation :

5W

Transistor Element Material :

SILICON

JESD-30 Code :

R-CDFM-F2

Terminal Form :

Flat

Emitter Base Voltage (VEBO) :

3.5V