23A005

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Max Power Dissipation :

3W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Highest Frequency Band :

S B

Operating Temperature :

200°C TJ

Configuration :

Single

Frequency - Transition :

4.3GHz

Terminal Position :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Transistor Element Material :

SILICON

Max Collector Current :

400mA

Pin Count :

2

Mount :

Chassis Mount, Screw

Additional Feature :

High Reliability

Pbfree Code :

No

Collector-Base Capacitance-Max :

3pF

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 5V

JESD-30 Code :

R-CDFM-F2

Gain :

8.5dB ~ 9.5dB

Collector Emitter Breakdown Voltage :

22V

Mounting Type :

Chassis Mount

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Contact Plating :

Tin

Number of Elements :

1

Power - Max :

3W

Number of Pins :

55

JESD-609 Code :

e0

Package / Case :

55BT

Transistor Type :

NPN

Published :

1997

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 months ago)

Collector Emitter Voltage (VCEO) :

22V

Terminal Form :

Flat

Transition Frequency :

4300MHz

Polarity/Channel Type :

NPN