ZXMD63P03XTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

ECCN Code :

EAR99

JEDEC-95 Code :

MO-187AA

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Additional Feature :

LOW THRESHOLD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Rds On (Max) @ Id, Vgs :

185m Ω @ 1.2A, 10V

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

2A

Pin Count :

8

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.185Ohm

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code :

S-PDSO-G8

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Power - Max :

1.04W

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)