ZXMD63C03XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Matte Tin (Sn)

Resistance :

185mOhm

Gate to Source Voltage (Vgs) :

20V

Rise Time :

4.8ns

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Radiation Hardening :

No

Number of Elements :

2

Height :

950μm

Max Power Dissipation :

1.04W

Width :

3.1mm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-2A

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

4.8 ns

Rds On (Max) @ Id, Vgs :

135m Ω @ 1.7A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Terminal Position :

Dual

Pbfree Code :

yes

Lead Free :

Lead Free

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

13.1 ns

Pin Count :

8

Mount :

Surface Mount

Number of Pins :

8

Terminal Form :

Gull wing

Weight :

139.989945mg

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Length :

3.1mm

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

1.25W

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

2.6 ns

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

JESD-609 Code :

e3

Additional Feature :

LOW THRESHOLD

Published :

2007