ZXMD63P02XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 P-Channel (Dual)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Resistance :

270mOhm

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 4.5V

Power Dissipation :

1.25W

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.04W

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Radiation Hardening :

No

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

139.989945mg

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Turn On Delay Time :

3.4 ns

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Turn-Off Delay Time :

16.4 ns

Number of Pins :

8

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Length :

3.1mm

Pbfree Code :

yes

Fall Time (Typ) :

9.6 ns

Number of Terminations :

8

Height :

950μm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

12V

Additional Feature :

LOW THRESHOLD

Lead Free :

Lead Free

Current Rating :

-1.7A

Rise Time :

9.6ns

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

1.7A

Gate Charge (Qg) (Max) @ Vgs :

5.25nC @ 4.5V

Voltage - Rated DC :

-20V

Published :

2006

JESD-609 Code :

e3

Width :

3.1mm

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 15V