ZXMD63P02XTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

Rise Time :

9.6ns

Number of Terminations :

8

Power Dissipation :

1.25W

Turn On Delay Time :

3.4 ns

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 4.5V

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Fall Time (Typ) :

9.6 ns

Resistance :

270mOhm

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

12V

Additional Feature :

LOW THRESHOLD

Length :

3.1mm

Pbfree Code :

yes

FET Type :

2 P-Channel (Dual)

Current Rating :

-1.7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

139.989945mg

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.04W

Width :

3.1mm

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-20V

Transistor Application :

SWITCHING

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Height :

950μm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5.25nC @ 4.5V

Turn-Off Delay Time :

16.4 ns

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 15V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-20V

Pin Count :

8

Published :

2006

Continuous Drain Current (ID) :

1.7A

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Pins :

8

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Radiation Hardening :

No