ZTX855STOA
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- Mfr.Part #
- ZTX855STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 4A E-LINE
- Stock
- 11,974
- In Stock ：
- 11,974
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2012
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 1.2W
- Surface Mount :
- No
- Terminal Finish :
- MATTE TIN
- Terminal Position :
- Single
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Transition Frequency :
- 90MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Configuration :
- Single
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- Number of Terminations :
- 3
- Base Part Number :
- ZTX855
- Frequency - Transition :
- 90MHz
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Package / Case :
- E-Line-3
- JESD-30 Code :
- R-PSIP-W3
- HTS Code :
- 8541.29.00.75
- Current - Collector (Ic) (Max) :
- 4A
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~200°C TJ
- Datasheets
- ZTX855STOA
ZTX855STOA Documents
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Tape & Reel (TR) Through Hole
ZTX855STOA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 260mV @ 400mA, 4A.A transition frequency of 90MHz is present in the part.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.
ZTX855STOA Features
the DC current gain for this device is 100 @ 1A 5V
the vce saturation(Max) is 260mV @ 400mA, 4A
a transition frequency of 90MHz
ZTX855STOA Applications
There are a lot of Diodes Incorporated
ZTX855STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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