ZTX851
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- Mfr.Part #
- ZTX851
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A E-LINE
- Stock
- 16
- In Stock ：
- 16
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.41mm
- Package / Case :
- E-Line-3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1.2W
- Mount :
- Through Hole
- Current Rating :
- 5A
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Pin Count :
- 3
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Height :
- 4.01mm
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 180mV
- Base Part Number :
- ZTX851
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Frequency :
- 130MHz
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 150V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 200mA, 5A
- Weight :
- 453.59237mg
- Published :
- 2006
- Manufacturer Package Identifier :
- E-Line
- Continuous Collector Current :
- 5A
- Transition Frequency :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Wire
- Gain Bandwidth Product :
- 130MHz
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1.2W
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 4.77mm
- Packaging :
- Bulk
- Datasheets
- ZTX851
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX851 Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 200mA, 5A.Maintaining the continuous collector voltage at 5A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).130MHz is present in the transition frequency.Maximum collector currents can be below 5A volts.
ZTX851 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 250mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 130MHz
ZTX851 Applications
There are a lot of Diodes Incorporated
ZTX851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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