ZTX855

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Mfr.Part #
ZTX855
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS NPN 150V 4A E-LINE
Stock
17,609
In Stock :
17,609

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
No
Emitter Base Voltage (VEBO) :
6V
Max Collector Current :
4A
Lead Free :
Lead Free
Pin Count :
3
Published :
2006
Max Power Dissipation :
1.2W
Current - Collector Cutoff (Max) :
50nA ICBO
Continuous Collector Current :
4A
Frequency :
90MHz
JESD-609 Code :
e3
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
260mV @ 400mA, 4A
Collector Emitter Voltage (VCEO) :
150V
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
15 Weeks
Weight :
453.59237mg
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~200°C TJ
Transistor Element Material :
SILICON
Mount :
Through Hole
Voltage - Rated DC :
150V
Number of Terminations :
3
Mounting Type :
Through Hole
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 5V
Collector Base Voltage (VCBO) :
250V
Height :
4.01mm
Collector Emitter Saturation Voltage :
210mV
Gain Bandwidth Product :
90MHz
Width :
2.41mm
REACH SVHC :
No SVHC
Collector Emitter Breakdown Voltage :
150V
Transition Frequency :
90MHz
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
Wire
Packaging :
Bulk
Current Rating :
4A
Package / Case :
E-Line-3
RoHS Status :
ROHS3 Compliant
Power Dissipation :
1.2W
Length :
4.77mm
Number of Pins :
3
Polarity/Channel Type :
NPN
Number of Elements :
1
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX855 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~200°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:E-Line-3, Number of Pins:3, ZTX855 pinout, ZTX855 datasheet PDF, ZTX855 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX855 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZTX855


NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole

ZTX855 Overview


DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 400mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 90MHz.In extreme cases, the collector current can be as low as 4A volts.

ZTX855 Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 90MHz


ZTX855 Applications


There are a lot of Diodes Incorporated
ZTX855 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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