ZTX849
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- Mfr.Part #
- ZTX849
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 5A E-LINE
- Stock
- 28,470
- In Stock ：
- 28,470
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.01mm
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 1.2W
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Package / Case :
- E-Line-3
- Max Collector Current :
- 5A
- Manufacturer Package Identifier :
- E-Line
- Transistor Element Material :
- SILICON
- Published :
- 2006
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.2W
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 200mA, 5A
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 30V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Form :
- Wire
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Weight :
- 453.59237mg
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Length :
- 4.77mm
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 180mV
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Base Part Number :
- ZTX849
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Width :
- 2.41mm
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Continuous Collector Current :
- 5A
- Pin Count :
- 3
- Datasheets
- ZTX849
ZTX849 Documents
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX849 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 100MHz.A maximum collector current of 5A volts can be achieved.
ZTX849 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz
ZTX849 Applications
There are a lot of Diodes Incorporated
ZTX849 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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