ZTX853
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- Mfr.Part #
- ZTX853
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A E-LINE
- Stock
- 2,734
- In Stock ：
- 2,734
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 200V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- E-Line-3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 400mA, 4A
- Manufacturer Package Identifier :
- E-Line
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 1.2W
- Transition Frequency :
- 130MHz
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 160mV
- Width :
- 2.41mm
- Operating Temperature :
- -55°C~200°C TJ
- Number of Pins :
- 3
- Frequency :
- 130MHz
- Gain Bandwidth Product :
- 130MHz
- Published :
- 2012
- Transistor Application :
- SWITCHING
- Weight :
- 453.59237mg
- Continuous Collector Current :
- 4A
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Collector Current :
- 4A
- Height :
- 4.01mm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 4A
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Pbfree Code :
- No
- Terminal Form :
- Wire
- Base Part Number :
- ZTX853
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 100V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Length :
- 4.77mm
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 1.2W
- Datasheets
- ZTX853
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX853 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 2V.With a collector emitter saturation voltage of 160mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 130MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
ZTX853 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 200mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 130MHz
ZTX853 Applications
There are a lot of Diodes Incorporated
ZTX853 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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