ZTX853
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- Mfr.Part #
- ZTX853
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A E-LINE
- Stock
- 2,734
- In Stock ：
- 2,734
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Max Power Dissipation :
- 1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Published :
- 2012
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- -55°C~200°C TJ
- Max Collector Current :
- 4A
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- hFE Min :
- 100
- Height :
- 4.01mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 160mV
- Collector Base Voltage (VCBO) :
- 200V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Current Rating :
- 4A
- Pbfree Code :
- No
- Number of Elements :
- 1
- Voltage - Rated DC :
- 100V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 400mA, 4A
- Continuous Collector Current :
- 4A
- Weight :
- 453.59237mg
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 130MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 130MHz
- Length :
- 4.77mm
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Manufacturer Package Identifier :
- E-Line
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- ZTX853
- Power Dissipation :
- 1.2W
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Packaging :
- Bulk
- Width :
- 2.41mm
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- E-Line-3
- Gain Bandwidth Product :
- 130MHz
- Radiation Hardening :
- No
- Datasheets
- ZTX853
ZTX853 Documents
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX853 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 2V.With a collector emitter saturation voltage of 160mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 130MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
ZTX853 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 200mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 130MHz
ZTX853 Applications
There are a lot of Diodes Incorporated
ZTX853 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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