VT6M1T2CR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

120mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

100mA

Drain-source On Resistance-Max :

4.2Ohm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

DS Breakdown Voltage-Min :

20V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

0.1A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-F6

Package / Case :

6-SMD, Flat Leads

Input Capacitance (Ciss) (Max) @ Vds :

7.1pF @ 10V

Number of Terminations :

6

FET Type :

N and P-Channel

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 100mA, 4.5V

JESD-609 Code :

e1

Packaging :

Cut Tape (CT)

FET Feature :

Logic Level Gate, 1.2V Drive

Terminal Finish :

TIN SILVER COPPER

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 100µA

Published :

1997

Pin Count :

6

Terminal Position :

Dual

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Elements :

2

Power - Max :

120mW