US6T9TR
- Mfr.Part #
- US6T9TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2PNP 30V 1A 6UMT
- Stock
- 19,814
- In Stock :
- 19,814
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e2
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -1A
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Published :
- 2007
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 6
- Transition Frequency :
- 320MHz
- Collector Base Voltage (VCBO) :
- -30V
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 6
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power - Max :
- 400mW
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 2
- Transistor Type :
- 2 PNP (Dual)
- Polarity :
- PNP
- hFE Min :
- 270
- Gain Bandwidth Product :
- 320MHz
- Number of Pins :
- 6
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Dual
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- US6T9TR
US6T9TR Documents

US6T9TR datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ROHM Semiconductor stock available at
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