US6T9TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Continuous Collector Current :

-1A

Transistor Type :

2 PNP (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Polarity :

PNP

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

6V

Terminal Finish :

Tin/Copper (Sn/Cu)

Collector Emitter Voltage (VCEO) :

30V

Operating Temperature :

150°C TJ

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Published :

2007

Current - Collector (Ic) (Max) :

1A

Power - Max :

400mW

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Mount :

Surface Mount

JESD-609 Code :

e2

hFE Min :

270

Mounting Type :

Surface Mount

Element Configuration :

Dual

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Base Voltage (VCBO) :

-30V

Gain Bandwidth Product :

320MHz

Number of Terminations :

6

Max Collector Current :

1A

Max Power Dissipation :

1W

Number of Elements :

2

Collector Emitter Breakdown Voltage :

30V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Transition Frequency :

320MHz

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO