US6T9TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Factory Lead Time :

12 Weeks

Collector Base Voltage (VCBO) :

-30V

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

30V

Polarity :

PNP

Current - Collector (Ic) (Max) :

1A

Emitter Base Voltage (VEBO) :

6V

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Terminal Finish :

Tin/Copper (Sn/Cu)

Published :

2007

Number of Pins :

6

Transistor Element Material :

SILICON

Transistor Type :

2 PNP (Dual)

Transition Frequency :

320MHz

Pbfree Code :

yes

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

30V

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

270

Max Collector Current :

1A

Continuous Collector Current :

-1A

ECCN Code :

EAR99

Max Power Dissipation :

1W

Radiation Hardening :

No

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

Gain Bandwidth Product :

320MHz

Pin Count :

6

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

10

Element Configuration :

Dual

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Power - Max :

400mW

Transistor Application :

AMPLIFIER

Package / Case :

6-TSSOP, SC-88, SOT-363