US6T5TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

280MHz

Operating Temperature :

150°C TJ

Published :

2007

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

30V

Transition Frequency :

280MHz

Max Collector Current :

2A

Number of Pins :

6

Collector Emitter Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Base Part Number :

US6T

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

30V

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Pin Count :

6

hFE Min :

270

Terminal Finish :

TIN COPPER

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Elements :

1

Mounting Type :

Surface Mount

Package / Case :

6-SMD, Flat Leads

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

12 Weeks

Current - Collector (Ic) (Max) :

2A

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Mount :

Surface Mount

Number of Terminations :

6

Max Power Dissipation :

1W

Emitter Base Voltage (VEBO) :

6V

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

370mV @ 75mA, 1.5A

Power - Max :

400mW