US6T4TR
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- Mfr.Part #
- US6T4TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A TUMT6
- Stock
- 1,987
- In Stock ：
- 1,987
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 15V
- Factory Lead Time :
- 12 Weeks
- Current - Collector (Ic) (Max) :
- 3A
- Package / Case :
- 6-SMD, Flat Leads
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 12V
- Number of Terminations :
- 6
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 280MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 12V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 280MHz
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Number of Pins :
- 6
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- JESD-609 Code :
- e2
- Base Part Number :
- US6T
- hFE Min :
- 270
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- Max Collector Current :
- 3A
- Terminal Finish :
- TIN COPPER
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Datasheets
- US6T4TR
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6T4TR Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
US6T4TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
US6T4TR Applications
There are a lot of ROHM Semiconductor
US6T4TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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