UMH33NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

820 @ 10mA, 5V

Product Category :

Bipolar Transistors - Pre-Biased

Lead Free :

Lead Free

Resistor - Base (R1) :

2.2kOhms

Current - Collector Cutoff (Max) :

500nA (ICBO)

Number of Elements :

2

Packaging :

Tape and Reel

Power - Max :

150mW

RoHS :

Details

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G6

Power Dissipation :

0.15(W)

Transistor Application :

SWITCHING

Package :

Digi-Reel?

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

20 V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Package Shape :

RECTANGULAR

Resistor - Emitter Base (R2) :

-

Collector Current-Max (IC) :

0.4 A

Polarity/Channel Type :

NPN

Number of Terminals :

6

Manufacturer :

Rohm Semiconductor

Package / Case :

6-TSSOP, SC-88, SOT-363

Mount :

Surface Mount

Package Type :

UMT

Mounting Type :

Surface Mount

Mounting Style :

SMD/SMT

Maximum Operating Temperature :

+ 150 C

DC Current Gain :

820@10MA@5V

Emitter-Collector Voltage (Max) :

20(V)

Brand :

Rohm Semiconductor

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30mA

Supplier Device Package :

UMT6

JESD-609 Code :

e2

Peak Reflow Temperature (Cel) :

260

Subcategory :

Transistors

Configuration :

Dual

Type :

NPN

Terminal Form :

Gull wing

DC Current Gain-Min (hFE) :

820

Product Status :

Active

Series :

-

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Reach Compliance Code :

Compliant

Terminal Finish :

Tin/Copper (Sn/Cu)

Surface Mount :

yes

Frequency - Transition :

35MHz

Additional Feature :

BUILT IN BIAS RESISTOR

Transistor Polarity :

NPN

Lifecycle Status :

Production (Last Updated: 2 years ago)

Current - Collector (Ic) (Max) :

400mA

Voltage - Collector Emitter Breakdown (Max) :

20V

Collector Current (DC) :

0.4(A)

Continuous Collector Current :

0.4 A