UMH3NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 NPN - Pre-Biased (Dual)

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

10

Emitter Base Voltage (VEBO) :

5V

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

4.7k Ω

Element Configuration :

Dual

Factory Lead Time :

13 Weeks

Radiation Hardening :

No

Number of Terminations :

6

Mount :

Surface Mount

Pbfree Code :

yes

Max Power Dissipation :

150mW

HTS Code :

8541.21.00.75

Lead Free :

Lead Free

Frequency - Transition :

250MHz

Continuous Collector Current :

100mA

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Base Part Number :

*MH3

Additional Feature :

Digital

ECCN Code :

EAR99

JESD-609 Code :

e2

Power Dissipation :

150mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Finish :

Tin/Copper (Sn/Cu)

Polarity :

NPN

hFE Min :

100

VCEsat-Max :

0.3 V

Voltage - Rated DC :

50V

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Mounting Type :

Surface Mount

Operating Supply Voltage :

50V

Current Rating :

100mA

Published :

2004

Collector Emitter Breakdown Voltage :

50V

Max Output Current :

100mA

Transition Frequency :

250MHz

Transistor Application :

SWITCHING

Pin Count :

6

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Terminal Form :

Gull wing