UMH1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN

VCEsat-Max :

0.3 V

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin/Copper (Sn/Cu)

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Number of Elements :

2

hFE Min :

56

Current Rating :

30mA

DC Current Gain-Min (hFE) :

56

Terminal Form :

Gull wing

Power Dissipation :

150mW

Transition Frequency :

250MHz

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

SOT-363

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Max Breakdown Voltage :

50V

Continuous Collector Current :

100mA

JESD-609 Code :

e2

Number of Terminations :

6

Pin Count :

6

Transistor Application :

SWITCHING

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

50V

Published :

2004

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Element Configuration :

Dual

Mount :

Surface Mount

Max Power Dissipation :

150mW

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

10

ECCN Code :

EAR99

Min Operating Temperature :

-55°C