UMH10NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

2.2k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

JESD-609 Code :

e2

Lead Free :

Lead Free

Max Output Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

Tin/Copper (Sn/Cu)

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

hFE Min :

80

Time@Peak Reflow Temperature-Max (s) :

10

Frequency - Transition :

250MHz

Current Rating :

100mA

Continuous Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

50V

Collector Emitter Voltage (VCEO) :

300mV

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Base Part Number :

*MH10

Polarity :

NPN

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Resistor - Emitter Base (R2) :

47k Ω

Operating Supply Voltage :

50V

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Power Dissipation :

150mW

Mounting Type :

Surface Mount

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

HTS Code :

8541.21.00.75

Pbfree Code :

yes

Max Collector Current :

100mA

Radiation Hardening :

No

Transistor Type :

2 NPN - Pre-Biased (Dual)

Element Configuration :

Dual

Published :

2011

Transition Frequency :

250MHz

Max Power Dissipation :

150mW

Number of Pins :

6