UM6J1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

0.2A

Radiation Hardening :

No

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

200mA

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Rise Time :

5ns

Number of Pins :

6

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

JESD-609 Code :

e2

Terminal Finish :

TIN COPPER

Fall Time (Typ) :

40 ns

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 10V

Drain to Source Voltage (Vdss) :

30V

Base Part Number :

*J1

DS Breakdown Voltage-Min :

30V

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 200mA, 10V

Turn-Off Delay Time :

30 ns

Max Power Dissipation :

150mW

Turn On Delay Time :

8 ns

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2011

Transistor Element Material :

SILICON