UM6J1NTN
- Mfr.Part #
- UM6J1NTN
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET 2P-CH 30V 0.2A UMT6
- Stock
- 31
- In Stock :
- 31
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mounting Type :
- Surface Mount
- FET Type :
- 2 P-Channel (Dual)
- Turn-Off Delay Time :
- 30 ns
- Factory Lead Time :
- 16 Weeks
- Terminal Finish :
- TIN COPPER
- Packaging :
- Tape and Reel (TR)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- Logic Level Gate
- JESD-609 Code :
- e2
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Base Part Number :
- *J1
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Continuous Drain Current (ID) :
- 200mA
- Number of Elements :
- 2
- DS Breakdown Voltage-Min :
- 30V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Published :
- 2011
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 150mW
- Input Capacitance (Ciss) (Max) @ Vds :
- 30pF @ 10V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 200mA, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 6
- Turn On Delay Time :
- 8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 5ns
- Drain to Source Voltage (Vdss) :
- 30V
- Fall Time (Typ) :
- 40 ns
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Datasheets
- UM6J1NTN

UM6J1NTN datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at
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