TT8K2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.13Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Terminal Finish :

TIN COPPER

FET Type :

2 N-Channel (Dual)

Rise Time :

30ns

Max Power Dissipation :

1.25W

Base Part Number :

*K2

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.5A, 4.5V

Mount :

Surface Mount

Package / Case :

8-SMD, Flat Lead

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Published :

2015

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

2.5A

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.5V @ 1mA

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

Pin Count :

8

Power Dissipation :

1.25W

JESD-609 Code :

e2

Fall Time (Typ) :

20 ns

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

10

Number of Pins :

8

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

20 ns

Factory Lead Time :

10 Weeks