TT8J3TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

1.25W

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

2.5A

Current - Continuous Drain (Id) @ 25°C :

2.5A

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.084Ohm

FET Type :

2 P-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

10 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 15V

Package / Case :

8-SMD, Flat Lead

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PDSO-F8

Mounting Type :

Surface Mount

Number of Terminations :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

84m Ω @ 2.5A, 10V

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes