TT8J1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Max Power Dissipation :

1W

ECCN Code :

EAR99

Published :

2009

Turn-Off Delay Time :

130 ns

Turn On Delay Time :

9 ns

Base Part Number :

*J1

Drain to Source Voltage (Vdss) :

12V

Fall Time (Typ) :

85 ns

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

10A

Pin Count :

8

Power - Max :

1.25W

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

12V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 6V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SMD, Flat Lead

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.5A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

35ns

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.061Ohm

Number of Terminations :

8

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 1mA

Gate to Source Voltage (Vgs) :

10V

Rds On (Max) @ Id, Vgs :

61m Ω @ 2.5A, 4.5V