TT8J1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.061Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 1mA

Max Power Dissipation :

1W

Rds On (Max) @ Id, Vgs :

61m Ω @ 2.5A, 4.5V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

ECCN Code :

EAR99

Pin Count :

8

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Base Part Number :

*J1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

2.5A

FET Feature :

Standard

Published :

2009

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

130 ns

Turn On Delay Time :

9 ns

Fall Time (Typ) :

85 ns

Pbfree Code :

yes

Number of Pins :

8

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

10V

Package / Case :

8-SMD, Flat Lead

Number of Elements :

2

Number of Terminations :

8

Rise Time :

35ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 6V

Pulsed Drain Current-Max (IDM) :

10A

DS Breakdown Voltage-Min :

12V

Power - Max :

1.25W

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING