TT8J2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

20ns

Terminal Finish :

TIN COPPER

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.25W

Published :

2009

Rds On (Max) @ Id, Vgs :

84m Ω @ 2.5A, 10V

Turn On Delay Time :

7 ns

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 5V

Fall Time (Typ) :

14 ns

JESD-609 Code :

e2

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SMD, Flat Lead

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Number of Terminations :

8

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.5A

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Base Part Number :

*J2

Power Dissipation :

1.25W

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Turn-Off Delay Time :

35 ns

Radiation Hardening :

No

Pin Count :

8

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Breakdown Voltage :

-30V

Pulsed Drain Current-Max (IDM) :

10A

FET Type :

2 P-Channel (Dual)