SUP90N15-18P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4180pF @ 75V

Element Configuration :

Single

JESD-609 Code :

e3

Published :

2011

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2.5V

Termination :

Through Hole

Pin Count :

3

FET Type :

N-Channel

Rise Time :

10ns

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Elements :

1

Dual Supply Voltage :

150V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation-Max :

3.75W Ta 375W Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Resistance :

18mOhm

Pbfree Code :

yes

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Packaging :

Tape and Reel (TR)

Power Dissipation :

3.75W

Turn-Off Delay Time :

25 ns

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

90A

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Fall Time (Typ) :

8 ns

Number of Terminations :

3

Turn On Delay Time :

15 ns

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

18m Ω @ 20A, 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V