SUP90N08-7M7P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Number of Terminations :

3

Fall Time (Typ) :

6 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Power Dissipation-Max :

3.75W Ta 208.3W Tc

Case Connection :

DRAIN

Number of Elements :

1

Vgs (Max) :

±20V

Turn On Delay Time :

17 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

22 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

90A

Drain to Source Breakdown Voltage :

75V

Input Capacitance (Ciss) (Max) @ Vds :

4250pF @ 30V

Power Dissipation :

3.75W

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Element Configuration :

Single

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.0077Ohm

Packaging :

Tape and Reel (TR)

Rise Time :

5ns

Pin Count :

3

Published :

2011

Mount :

Through Hole

Package / Case :

TO-220-3

ECCN Code :

EAR99

Series :

TrenchFET®

JEDEC-95 Code :

TO-220AB