SUP90N08-6M8P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0068Ohm

Mounting Type :

Through Hole

Power Dissipation :

3.75W

Input Capacitance (Ciss) (Max) @ Vds :

4620pF @ 30V

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Pins :

3

Turn On Delay Time :

16 ns

Mount :

Through Hole

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

90A

Published :

2011

Rise Time :

11ns

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Pin Count :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Series :

TrenchFET®

Number of Terminations :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Termination :

Through Hole

Power Dissipation-Max :

3.75W Ta 272W Tc

REACH SVHC :

No SVHC

Turn-Off Delay Time :

24 ns

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 20A, 10V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

75V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

75V

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single