SUP90N03-03-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Power Dissipation :

3.75W

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 28.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

12065pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Fall Time (Typ) :

12 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Number of Pins :

3

Turn On Delay Time :

55 ns

Mount :

Through Hole

Width :

4.7mm

Turn-Off Delay Time :

55 ns

Operating Mode :

ENHANCEMENT MODE

Resistance :

2.9mOhm

ECCN Code :

EAR99

Power Dissipation-Max :

3.75W Ta 250W Tc

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

257nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Length :

10.41mm

Rise Time :

180ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

90A

Avalanche Energy Rating (Eas) :

64.8 mJ

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Number of Elements :

1

FET Type :

N-Channel

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

28.8A

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

90A

Number of Terminations :

3

Weight :

6.000006g

Published :

2011

Height :

9.01mm

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Element Configuration :

Single