SUP90N03-03-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

9.01mm

Pbfree Code :

yes

Length :

10.41mm

Drain Current-Max (Abs) (ID) :

90A

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 28.8A, 10V

Weight :

6.000006g

Resistance :

2.9mOhm

Power Dissipation-Max :

3.75W Ta 250W Tc

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

64.8 mJ

Element Configuration :

Single

Rise Time :

180ns

Published :

2011

Turn On Delay Time :

55 ns

JESD-609 Code :

e3

Width :

4.7mm

Mounting Type :

Through Hole

Power Dissipation :

3.75W

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

28.8A

Number of Channels :

1

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

30V

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

12065pF @ 15V

Fall Time (Typ) :

12 ns

Pulsed Drain Current-Max (IDM) :

90A

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Number of Elements :

1

Number of Pins :

3

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

257nC @ 10V

Turn-Off Delay Time :

55 ns

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)