SUP90140E-GE3

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Mfr.Part #
SUP90140E-GE3
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 90A TO220AB
Stock
4,458
In Stock :
4,458

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
200V
Rds On (Max) @ Id, Vgs :
17m Ω @ 30A, 10V
JEDEC-95 Code :
TO-220AB
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
7.5V 10V
Pulsed Drain Current-Max (IDM) :
240A
Input Capacitance (Ciss) (Max) @ Vds :
4132pF @ 100V
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-220-3
Drain-source On Resistance-Max :
0.018Ohm
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
200V
Avalanche Energy Rating (Eas) :
180 mJ
Factory Lead Time :
14 Weeks
Threshold Voltage :
4V
REACH SVHC :
Unknown
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Vgs (Max) :
±20V
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
96nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Series :
ThunderFET®
Continuous Drain Current (ID) :
90A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
375W Tc
Published :
2016
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Transistor Application :
SWITCHING
Datasheets
SUP90140E-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SUP90140E-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, SUP90140E-GE3 pinout, SUP90140E-GE3 datasheet PDF, SUP90140E-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SUP90140E-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SUP90140E-GE3


N-Channel Tube 17m Ω @ 30A, 10V ±20V 4132pF @ 100V 96nC @ 10V 200V TO-220-3

SUP90140E-GE3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.The maximum input capacitance of this device is 4132pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.

SUP90140E-GE3 Features


the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 240A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


SUP90140E-GE3 Applications


There are a lot of Vishay Siliconix
SUP90140E-GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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