SUP90N06-6M0P-E3
- Mfr.Part #
- SUP90N06-6M0P-E3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 90A TO220AB
- Stock
- 5,458
- In Stock :
- 5,458
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 20A, 10V
- Height :
- 9.01mm
- Packaging :
- Tube
- Number of Elements :
- 1
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- Weight :
- 6.000006g
- Width :
- 4.7mm
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 25 ns
- Drain-source On Resistance-Max :
- 0.006Ohm
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 30V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Fall Time (Typ) :
- 8 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Length :
- 10.41mm
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 240A
- Published :
- 2011
- Gate to Source Voltage (Vgs) :
- 20V
- Termination :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Number of Channels :
- 1
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Rise Time :
- 10ns
- Dual Supply Voltage :
- 60V
- Power Dissipation :
- 3.75W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 90A
- Turn On Delay Time :
- 16 ns
- Series :
- TrenchFET®
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 3.75W Ta 272W Tc
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 14 Weeks
- Base Part Number :
- SUP90N06
- Datasheets
- SUP90N06-6M0P-E3
N-Channel Tube 6m Ω @ 20A, 10V ±20V 4700pF @ 30V 120nC @ 10V TO-220-3
SUP90N06-6M0P-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4700pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 240A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
SUP90N06-6M0P-E3 Features
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 240A.
SUP90N06-6M0P-E3 Applications
There are a lot of Vishay Siliconix
SUP90N06-6M0P-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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