SUM110P04-05-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

-3V

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Series :

TrenchFET®

Published :

2016

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Element Configuration :

Single

Power Dissipation :

15W

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Number of Pins :

3

Number of Terminations :

2

Pin Count :

4

Pbfree Code :

yes

Turn Off Time-Max (toff) :

220ns

Max Junction Temperature (Tj) :

175°C

Gate to Source Voltage (Vgs) :

20V

Rise Time :

290ns

Contact Plating :

Tin

Height :

5.08mm

Drain to Source Voltage (Vdss) :

40V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

Lead Free :

Lead Free

Width :

9.65mm

Resistance :

4.2mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

JESD-609 Code :

e3

Nominal Vgs :

-3 V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

15W Ta 375W Tc

Turn On Delay Time :

25 ns

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

35 ns

Vgs (Max) :

±20V

Factory Lead Time :

14 Weeks

Pulsed Drain Current-Max (IDM) :

240A

Mount :

Surface Mount

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-40V

Length :

10.41mm

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Turn-Off Delay Time :

110 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

-110A

Number of Channels :

1

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Time-Max (ton) :

480ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight :

1.437803g