SUM110P04-04L-E3
- Mfr.Part #
- SUM110P04-04L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 110A TO263
- Stock
- 2,465
- In Stock :
- 2,465
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 4.83mm
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 30A, 10V
- Number of Terminations :
- 2
- Mount :
- Surface Mount, Through Hole
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Weight :
- 1.437803g
- JESD-609 Code :
- e3
- Length :
- 10.41mm
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 110A
- Radiation Hardening :
- No
- Series :
- TrenchFET®
- Fall Time (Typ) :
- 110 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 25 ns
- Width :
- 9.65mm
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 350nC @ 10V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 240A
- Rise Time :
- 30ns
- Turn-Off Delay Time :
- 190 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 40V
- Power Dissipation :
- 3.75W
- Drain to Source Breakdown Voltage :
- -40V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 11200pF @ 25V
- Resistance :
- 4.2mOhm
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 3.75W Ta 375W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2009
- Datasheets
- SUM110P04-04L-E3
P-Channel Tape & Reel (TR) 4.2m Ω @ 30A, 10V ±20V 11200pF @ 25V 350nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM110P04-04L-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 11200pF @ 25V.This device conducts a continuous drain current (ID) of 110A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 190 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SUM110P04-04L-E3 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 190 ns
based on its rated peak drain current 240A.
a 40V drain to source voltage (Vdss)
SUM110P04-04L-E3 Applications
There are a lot of Vishay Siliconix
SUM110P04-04L-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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