SUM110P04-04L-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

25 ns

Series :

TrenchFET®

FET Type :

P-Channel

Radiation Hardening :

No

Width :

9.65mm

Power Dissipation :

3.75W

Number of Channels :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

1.437803g

Drain to Source Voltage (Vdss) :

40V

Resistance :

4.2mOhm

Published :

2009

Turn-Off Delay Time :

190 ns

Number of Elements :

1

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 30A, 10V

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount, Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.75W Ta 375W Tc

Number of Pins :

3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Pbfree Code :

yes

Number of Terminations :

2

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

110 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

240A

Transistor Application :

SWITCHING

Length :

10.41mm

Drain to Source Breakdown Voltage :

-40V

Rise Time :

30ns

Continuous Drain Current (ID) :

110A

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Pin Count :

4

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

20V