SUM110N04-2M3L-E3
- Mfr.Part #
- SUM110N04-2M3L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 110A TO263
- Stock
- 6,334
- In Stock :
- 6,334
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Resistance :
- 2.3MOhm
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Turn On Delay Time :
- 25 ns
- Mount :
- Surface Mount
- Max Operating Temperature :
- 175°C
- Reverse Recovery Time :
- 56 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 2.3mOhm @ 30A, 10V
- Power Dissipation-Max :
- 3.75W Ta 375W Tc
- Number of Pins :
- 3
- Power Dissipation :
- 3.75W
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ) :
- 200 ns
- Published :
- 2012
- Input Capacitance :
- 13.6nF
- Drain to Source Voltage (Vdss) :
- 40V
- Supplier Device Package :
- TO-263 (D2Pak)
- Continuous Drain Current (ID) :
- 110A
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Series :
- TrenchFET®
- Packaging :
- Cut Tape (CT)
- Rise Time :
- 100ns
- Drain to Source Breakdown Voltage :
- 40V
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 3V
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 125 ns
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Termination :
- SMD/SMT
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 40V
- Nominal Vgs :
- 3 V
- Rds On Max :
- 2.3 mΩ
- Datasheets
- SUM110N04-2M3L-E3
N-Channel Cut Tape (CT) 2.3mOhm @ 30A, 10V ±20V 13600pF @ 25V 360nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM110N04-2M3L-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [125 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 2.3mOhm.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SUM110N04-2M3L-E3 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 125 ns
single MOSFETs transistor is 2.3mOhm
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)
SUM110N04-2M3L-E3 Applications
There are a lot of Vishay Siliconix
SUM110N04-2M3L-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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