SUM110N04-03-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

JESD-609 Code :

e3

Length :

10.41mm

Height :

4.83mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 30A, 10V

Rise Time :

170ns

Dual Supply Voltage :

40V

Drain-source On Resistance-Max :

0.0028Ohm

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Weight :

1.437803g

FET Type :

N-Channel

Published :

2009

REACH SVHC :

No SVHC

Turn On Delay Time :

25 ns

Turn-Off Delay Time :

55 ns

Pin Count :

4

Power Dissipation-Max :

3.75W Ta 375W Tc

Transistor Element Material :

SILICON

Number of Channels :

1

Power Dissipation :

437.5W

Pulsed Drain Current-Max (IDM) :

440A

Threshold Voltage :

4V

Number of Terminations :

2

Termination :

SMD/SMT

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Nominal Vgs :

4 V

Fall Time (Typ) :

110 ns

Reverse Recovery Time :

60 ns

Pbfree Code :

yes

Continuous Drain Current (ID) :

110A

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V