SUM110N03-03P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

90 ns

Rise Time :

20ns

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Continuous Drain Current (ID) :

110A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Turn On Delay Time :

20 ns

Published :

2009

Power Dissipation :

3.75W

Case Connection :

DRAIN

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

400A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0026Ohm

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 30A, 10V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Fall Time (Typ) :

25 ns

Power Dissipation-Max :

3.75W Ta 375W Tc

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Drain to Source Breakdown Voltage :

30V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

12100pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Pin Count :

4

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Terminal Form :

Gull wing