SUM110N05-06L-E3
- Mfr.Part #
- SUM110N05-06L-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 110A D2PAK
- Stock
- 10,132
- In Stock :
- 10,132
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 30A, 10V
- Packaging :
- Digi-Reel®
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Resistance :
- 6mOhm
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Published :
- 2009
- Rise Time :
- 15ns
- Number of Terminations :
- 2
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 55V
- Width :
- 9.652mm
- Pulsed Drain Current-Max (IDM) :
- 240A
- Reverse Recovery Time :
- 70 ns
- Max Operating Temperature :
- 175°C
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Fall Time (Typ) :
- 15 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Series :
- TrenchFET®
- Length :
- 10.414mm
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 3.7W
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Pin Count :
- 4
- Continuous Drain Current (ID) :
- 110A
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- SMD/SMT
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Mount :
- Surface Mount, Through Hole
- Turn-Off Delay Time :
- 35 ns
- Drain to Source Breakdown Voltage :
- 55V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 4.826mm
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 3 V
- Turn On Delay Time :
- 15 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 36W
- Datasheets
- SUM110N05-06L-E3
N-Channel Digi-Reel® 6m Ω @ 30A, 10V 3300pF @ 25V 100nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM110N05-06L-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 240A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.
SUM110N05-06L-E3 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 240A.
SUM110N05-06L-E3 Applications
There are a lot of Vishay Siliconix
SUM110N05-06L-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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