STS3DPF60L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

54ns

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

16V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e4

Current Rating :

-3A

Continuous Drain Current (ID) :

3A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Elements :

2

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain Current-Max (Abs) (ID) :

3A

Fall Time (Typ) :

14.5 ns

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

120m Ω @ 1.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15.7nC @ 4.5V

Pin Count :

8

Turn-Off Delay Time :

39 ns

Qualification Status :

Not Qualified

Base Part Number :

STS3D

FET Type :

2 P-Channel (Dual)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Drain to Source Breakdown Voltage :

-60V

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.16Ohm

Additional Feature :

LOW THRESHOLD

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Series :

STripFET™

Terminal Form :

Gull wing

Voltage - Rated DC :

-60V

Max Power Dissipation :

2W