STS3P6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

5.3ns

Resistance :

160mOhm

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 48V

Power Dissipation :

2.7W

Series :

DeepGATE™, STripFET™ VI

Drain to Source Voltage (Vdss) :

60V

FET Type :

P-Channel

Mounting Type :

Surface Mount

Mount :

Surface Mount

Lead Free :

Lead Free

Base Part Number :

STS3P

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Turn-Off Delay Time :

14 ns

Number of Elements :

1

ECCN Code :

EAR99

Width :

4mm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Turn On Delay Time :

6.4 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.5A, 10V

Continuous Drain Current (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Number of Pins :

8

Fall Time (Typ) :

3.7 ns

Power Dissipation-Max :

2.7W Tc

Packaging :

Digi-Reel®

Drain to Source Breakdown Voltage :

-60V

Operating Temperature :

-55°C~150°C TJ

Length :

5mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

1.5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)