STS3P6F6
- Mfr.Part #
- STS3P6F6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 3A 8SOIC
- Stock
- 2,656
- In Stock :
- 2,656
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- -60V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 160mOhm
- Packaging :
- Digi-Reel®
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Height :
- 1.5mm
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 6.4nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.7W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 48V
- Continuous Drain Current (ID) :
- 3A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 3.7 ns
- Length :
- 5mm
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Series :
- DeepGATE™, STripFET™ VI
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 1.5A, 10V
- Rise Time :
- 5.3ns
- FET Type :
- P-Channel
- Base Part Number :
- STS3P
- Width :
- 4mm
- Element Configuration :
- Single
- Power Dissipation :
- 2.7W
- Turn On Delay Time :
- 6.4 ns
- Turn-Off Delay Time :
- 14 ns
- Datasheets
- STS3P6F6

P-Channel Digi-Reel® 160m Ω @ 1.5A, 10V ±20V 340pF @ 48V 6.4nC @ 10V 60V 8-SOIC (0.154, 3.90mm Width)
STS3P6F6 Description
STS3P6F6 is a 60v P-channel STripFET? F6 Power MOSFET. The STS3P6F6 is a P-channel Power MOSFET developed using the 6th generation of STripFET? technology, with a new gate structure. The resulting Power MOSFET STS3P6F6 exhibits the lowest RDS(on) in all packages. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor STS3P6F6 is in the SOIC-8 package with 2.7W power dissipation.
STS3P6F6 Features
-
RDS(on) * Qg industry benchmark
-
Extremely low on-resistance RDS(on)
-
High avalanche ruggedness
-
Low gate drive power losses
-
Drain-source voltage: 60v
STS3P6F6 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
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