STS30N3LLH6
- Mfr.Part #
- STS30N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A 8SO
- Stock
- 43,791
- In Stock :
- 43,791
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Base Part Number :
- STS30
- Number of Pins :
- 8
- Avalanche Energy Rating (Eas) :
- 525 mJ
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4040pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 30A
- JESD-609 Code :
- e4
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 15A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Series :
- DeepGATE™, STripFET™ VI
- Terminal Position :
- Dual
- Power Dissipation :
- 2.7W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 2.7W Tc
- DS Breakdown Voltage-Min :
- 30V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 4.5V
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0035Ohm
- ECCN Code :
- EAR99
- Datasheets
- STS30N3LLH6

N-Channel Tape & Reel (TR) 2.4m Ω @ 15A, 10V ±20V 4040pF @ 25V 40nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
STS30N3LLH6 Description
STS30N3LLH6 P-Channel MOSFET was created with a distinctive PowerTrench technology that provides the most efficient RDS(on). STS30N3LLH6 MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. STS30N3LLH6 STMicroelectronics is a general-purpose device and can be used in a variety of applications.
STS30N3LLH6 Features
Extended VGSS range for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
STS30N3LLH6 Applications
Control Switch
Synchronous & Non-Synchronous Buck
Load Switch
Inverter
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