STP8NS25

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 25V

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

32A

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

8A

Transistor Element Material :

SILICON

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MESH OVERLAY™

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

16 ns

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.45Ohm

Voltage - Rated DC :

250V

Transistor Application :

SWITCHING

Current Rating :

8A

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

450m Ω @ 4A, 10V

Rise Time :

18ns

Packaging :

Tube

FET Type :

N-Channel

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

80W

Drain to Source Breakdown Voltage :

250V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP8N

Gate Charge (Qg) (Max) @ Vgs :

51.8nC @ 10V

Qualification Status :

Not Qualified

Element Configuration :

Single

Vgs (Max) :

±20V

Lead Free :

Lead Free

Power Dissipation-Max :

80W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3