STP80N6F6
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- Mfr.Part #
- STP80N6F6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 110A TO220
- Stock
- 1,900
- In Stock ：
- 1,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 110A
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Width :
- 4.6mm
- Power Dissipation-Max :
- 120W Tc
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Height :
- 15.75mm
- Resistance :
- 5mOhm
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 50A, 10V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 7480pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STP80N
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Package / Case :
- TO-220-3
- Series :
- Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 122nC @ 10V
- Length :
- 10.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STP80N6F6
N-Channel Tube 5.8m Ω @ 50A, 10V ±20V 7480pF @ 25V 122nC @ 10V TO-220-3
STP80N6F6 Overview
The maximum input capacitance of this device is 7480pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 110A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STP80N6F6 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 60V voltage
STP80N6F6 Applications
There are a lot of STMicroelectronics
STP80N6F6 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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