STP80N70F4
- Mfr.Part #
- STP80N70F4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 68V 85A TO220AB
- Stock
- 25,117
- In Stock :
- 25,117
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 185 mJ
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 150W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Base Part Number :
- STP80N
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 340A
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 85A
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Series :
- DeepGATE™, STripFET™
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 5600pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 9.8m Ω @ 40A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- DS Breakdown Voltage-Min :
- 68V
- Drain-source On Resistance-Max :
- 0.0098Ohm
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Voltage (Vdss) :
- 68V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Pin Count :
- 3
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- STP80N70F4

N-Channel 9.8m Ω @ 40A, 10V ±20V 5600pF @ 25V 90nC @ 10V 68V TO-220-3
STP80N70F4 Description
STP80N70F4 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a Drain to Source Voltage (Vdss) of 68V. The operating temperature of the STP80N70F4 is -55°C~175°C TJ and its maximum power dissipation is 150W Tc. The N-channel Power MOSFET in question was created utilizing ST's STripFETTM DeepGATETM technology. With a novel gate layout and a focus on minimizing on-state resistance, the device offers greater switching performance.
STP80N70F4 Features
-
N-channel enhancement mode
-
100% avalanched rated
-
Low gate charge
-
Very low on-resistance
STP80N70F4 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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