STP80N70F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

340A

Drain Current-Max (Abs) (ID) :

85A

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0098Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

FET Type :

N-Channel

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

68V

JEDEC-95 Code :

TO-220AB

Base Part Number :

STP80N

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Surface Mount :

No

Power Dissipation-Max :

150W Tc

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Series :

DeepGATE™, STripFET™

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Transistor Application :

SWITCHING

Number of Elements :

1

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

185 mJ

Drain to Source Voltage (Vdss) :

68V

Rds On (Max) @ Id, Vgs :

9.8m Ω @ 40A, 10V