STP80N20M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Rds On (Max) @ Id, Vgs :

23m Ω @ 30.5A, 10V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

200V

Fall Time (Typ) :

176 ns

FET Type :

N-Channel

Resistance :

23mOhm

Voltage :

200V

Power Dissipation :

190W

Rise Time :

31ns

Number of Elements :

1

Pin Count :

3

Current :

61A

Element Configuration :

Single

Base Part Number :

STP80N

JESD-609 Code :

e3

Turn-Off Delay Time :

131 ns

Power Dissipation-Max :

190W Tc

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

4329pF @ 50V

Operating Temperature :

150°C TJ

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Series :

MDmesh™ V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Packaging :

Tube

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

61A