STP80NE03L-06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Fall Time (Typ) :

165 ns

Packaging :

Tube

Package / Case :

TO-220-3

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

80A

Lead Free :

Lead Free

Rise Time :

260ns

Element Configuration :

Single

Number of Terminations :

3

ECCN Code :

EAR99

Vgs (Max) :

±22V

Rds On (Max) @ Id, Vgs :

6m Ω @ 40A, 10V

Gate to Source Voltage (Vgs) :

22V

Base Part Number :

STP80N

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

150W

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

30V

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 5V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Turn On Time-Max (ton) :

405ns

Peak Reflow Temperature (Cel) :

245

Drain to Source Breakdown Voltage :

30V

Feedback Cap-Max (Crss) :

700 pF

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

600 mJ

Reach Compliance Code :

not_compliant

Current Rating :

80A

Pin Count :

3

FET Type :

N-Channel

Power Dissipation-Max :

150W Tc

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Operating Temperature :

175°C TJ

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

320A

Drain-source On Resistance-Max :

0.009Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

80A Tc