STP80N70F6
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- Mfr.Part #
- STP80N70F6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 68V 96A TO220
- Stock
- 24,782
- In Stock ：
- 24,782
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Fall Time (Typ) :
- 23 ns
- Turn-Off Delay Time :
- 102 ns
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 48A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 96A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Power Dissipation :
- 110W
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 5850pF @ 25V
- Series :
- DeepGATE™, STripFET™ VI
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 99nC @ 10V
- Rise Time :
- 29ns
- Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 68V
- Turn On Delay Time :
- 23 ns
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 42 Weeks
- Base Part Number :
- STP80N
- Power Dissipation-Max :
- 110W Tc
- Datasheets
- STP80N70F6
N-Channel Tube 8m Ω @ 48A, 10V ±20V 5850pF @ 25V 99nC @ 10V TO-220-3
STP80N70F6 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5850pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 96A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=68V. And this device has 68V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 102 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 23 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STP80N70F6 Features
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 68V voltage
the turn-off delay time is 102 ns
STP80N70F6 Applications
There are a lot of STMicroelectronics
STP80N70F6 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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