STP8NM60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

14 ns

Continuous Drain Current (ID) :

8A

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

8A

Mount :

Through Hole

Turn-Off Delay Time :

23 ns

Transistor Element Material :

SILICON

Current Rating :

8A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Base Part Number :

STP8N

Vgs (Max) :

±30V

FET Type :

N-Channel

Number of Terminations :

3

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Terminal Finish :

Matte Tin (Sn) - annealed

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.5A, 10V

Package / Case :

TO-220-3

JESD-609 Code :

e3

Packaging :

Tube

Series :

MDmesh™

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Power Dissipation-Max :

100W Tc

Power Dissipation :

100W

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Drain-source On Resistance-Max :

1Ohm

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

200 mJ

Pin Count :

3

Rise Time :

10ns

Number of Elements :

1

Number of Pins :

3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Voltage - Rated DC :

650V

Drain to Source Breakdown Voltage :

600V