STP80PF55

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Length :

10.4mm

Number of Terminations :

3

Radiation Hardening :

No

Rise Time :

190ns

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 10V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

16V

Threshold Voltage :

-3V

Lead Free :

Lead Free

Pin Count :

3

Turn On Delay Time :

35 ns

Terminal Finish :

Tin (Sn)

FET Type :

P-Channel

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

165 ns

Mounting Type :

Through Hole

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Package / Case :

TO-220-3

Power Dissipation :

300W

Base Part Number :

STP80P

Packaging :

Tube

Width :

4.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

80 ns

Vgs (Max) :

±16V

Drain to Source Voltage (Vdss) :

55V

Resistance :

18mOhm

Continuous Drain Current (ID) :

80A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

18m Ω @ 40A, 10V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Height :

9.15mm

Current Rating :

-80A

Voltage - Rated DC :

-55V

Power Dissipation-Max :

300W Tc

RoHS Status :

ROHS3 Compliant

Weight :

4.535924g

Drain to Source Breakdown Voltage :

-55V

Series :

STripFET™ II

REACH SVHC :

No SVHC

Number of Elements :

1

Transistor Element Material :

SILICON