STGB6NC60HDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Td (on/off) @ 25°C :

12ns/76ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

600V

Radiation Hardening :

No

Number of Elements :

1

Test Condition :

390V, 3A, 10 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

17.3 ns

Width :

9.35mm

Max Power Dissipation :

56W

Base Part Number :

STGB6

Packaging :

Tape and Reel (TR)

Reverse Recovery Time :

21 ns

Gate Charge :

13.6nC

Mount :

Surface Mount

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Series :

PowerMESH™

Peak Reflow Temperature (Cel) :

245

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 3A

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

2.7V

Element Configuration :

Single

Number of Terminations :

2

Transistor Application :

POWER CONTROL

JESD-609 Code :

e3

ECCN Code :

EAR99

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.4mm

Terminal Form :

Gull wing

Turn On Delay Time :

13 ns

Mounting Type :

Surface Mount

Current - Collector Pulsed (Icm) :

21A

Turn Off Time-Nom (toff) :

222 ns

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Rise Time :

5ns

Weight :

2.240009g

Time@Peak Reflow Temperature-Max (s) :

30

Height :

4.6mm

Current Rating :

15A

Voltage - Rated DC :

600V

Collector Emitter Voltage (VCEO) :

600V

Polarity/Channel Type :

N-Channel

Switching Energy :

20μJ (on), 68μJ (off)

Input Type :

Standard

Turn-Off Delay Time :

98 ns

Max Collector Current :

15A

Gate-Emitter Thr Voltage-Max :

5.75V

Gate-Emitter Voltage-Max :

20V

Continuous Collector Current :

12A

Factory Lead Time :

8 Weeks

Terminal Finish :

MATTE TIN